Photosensitive PbSe layers with shifted long-wave photosensitivity boundary

G. A. Kazantsev; Y. A. Glebov; V. G. Butkevitch; N. Y. Zvereva; T. A. Kamishina; T. M. Strelnikova

doi:10.1117/12.350916

10 June 1999 Photosensitive PbSe layers with shifted long-wave photosensitivity boundary

G. A. Kazantsev, Y. A. Glebov, V. G. Butkevitch, N. Y. Zvereva, T. A. Kamishina, T. M. Strelnikova

Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350916
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation

Abstract

Results of studying chemical PbSe layers deposited on photoglass substrates with selective interference dichroic mirrors increasing photoactive absorption in 4 micrometers and more spectral range are given. Integral D* and S_u have higher values in comparison with photolayers manufactured by traditional methods.

Citation Download Citation

G. A. Kazantsev, Y. A. Glebov, V. G. Butkevitch, N. Y. Zvereva, T. A. Kamishina, and T. M. Strelnikova "Photosensitive PbSe layers with shifted long-wave photosensitivity boundary", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); https://doi.org/10.1117/12.350916

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