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10 June 1999 Photosensitive PbSe layers with shifted long-wave photosensitivity boundary
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Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350916
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation
Abstract
Results of studying chemical PbSe layers deposited on photoglass substrates with selective interference dichroic mirrors increasing photoactive absorption in 4 micrometers and more spectral range are given. Integral D* and Su have higher values in comparison with photolayers manufactured by traditional methods.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. A. Kazantsev, Y. A. Glebov, V. G. Butkevitch, N. Y. Zvereva, T. A. Kamishina, and T. M. Strelnikova "Photosensitive PbSe layers with shifted long-wave photosensitivity boundary", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); https://doi.org/10.1117/12.350916
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