10 June 1999 Possibility of explanation of the noise-factor anomal dependence on carriers multiplication factor (photogain) in threshold avalanche photodetectors based on MIS-type heterostructures at the expense
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Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350891
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation
Abstract
A physical model for explanation of experimentally observed effect of avalanche noise-factor F decrease in MIS-type heterostructures upon a multiplication factor increase is offered. The model is based on the assumption that carriers are retarded near heteroboundary due to trapping by a potential well (for a example in SiO2/Si and TiO2/Si) or by surface levels. The calculation results correlate numerically with the experimental data.
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Nikolay N. Kurochkin, Nikolay N. Kurochkin, Vyacheslav A. Kholodnov, Vyacheslav A. Kholodnov, "Possibility of explanation of the noise-factor anomal dependence on carriers multiplication factor (photogain) in threshold avalanche photodetectors based on MIS-type heterostructures at the expense", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); doi: 10.1117/12.350891; https://doi.org/10.1117/12.350891
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