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10 June 1999 Ultimate performance of new infrared HgCdTe focal plane arrays
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Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350903
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation
Abstract
We theoretically study physical processes in new promising hybrid IR FPAs based on HgCdTe p-n junctions and analyze them ultimate performance for 3 - 5 micrometers and 8 - 10 micrometers spectral ranges. Architecture of these FPAs are much simpler than that of existing FPAs: IR-sensitive HgCdTe p-n junctions are used as switches themselves, and capacitors used as strong elements occupy all the area under each p-n junction. These capacitors can be produced on the base of dielectrics with relatively high permittivity (of TiO2, type or integrated ferroelectrics). In contrast to CCD and CID, the proposed FPA does not use charge transfer between electrodes separated in space. We formulate requirements to the parameters of photosensitive elements and storage capacitors to reach the largest integration time and threshold characteristics close to the theoretical limits. It is shown that in principle the considered FPAs have unique parameters and 1/f noise of amplifiers can be suppressed in them. FPA for 3 - 5 micrometers spectral range with p-n junction of 20 X 20 micrometers 2 area can operate in BLIP mode at background temperature 300 K;its photosignal integration time equal to the persistence of human eye and format can reach 1024 X 1024 pixels. For 8 - 10 micrometers range these parameters are 300 microsecond(s) and 256 X 256 pixels, respectively, when TiO2 storage capacitors are used.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. V. Osipov, Vladimir P. Ponomarenko, and A. Yu. Selyakov "Ultimate performance of new infrared HgCdTe focal plane arrays", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); https://doi.org/10.1117/12.350903
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