10 June 1999 Ultraviolet photodetectors based on wide-bandgap A3B5 compounds
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Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350883
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation
Abstract
We report on the fabrication and characterization of ultraviolet photodetectors with Schottky barrier based on semiconductor GaP, GaPxAs1-x and GaAs. As row materials are used n-n+-type epitaxial structures. Base parameters of the photodetectors are demonstrated.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Anisimova, D. Anisimova, Vitaly I. Stafeev, Vitaly I. Stafeev, } "Ultraviolet photodetectors based on wide-bandgap A3B5 compounds", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); doi: 10.1117/12.350883; https://doi.org/10.1117/12.350883
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