Ultraviolet photodetectors based on wide-bandgap A3B5 compounds

D. Anisimova; Vitaly I. Stafeev

doi:10.1117/12.350883

10 June 1999 Ultraviolet photodetectors based on wide-bandgap A³B⁵ compounds

D. Anisimova, Vitaly I. Stafeev

Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350883
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation

Abstract

We report on the fabrication and characterization of ultraviolet photodetectors with Schottky barrier based on semiconductor GaP, GaP_xAs_1-x and GaAs. As row materials are used n-n⁺-type epitaxial structures. Base parameters of the photodetectors are demonstrated.

Citation Download Citation

D. Anisimova and Vitaly I. Stafeev "Ultraviolet photodetectors based on wide-bandgap A³B⁵ compounds", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); https://doi.org/10.1117/12.350883

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