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1 January 1983 Resistance To Oxidation Of Te-Se Optical Recording Films
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Proceedings Volume 0382, Optical Data Storage; (1983)
Event: Optical Data Storage, 1983, Incline Village, United States
The resistance to oxidation and cracking of metal-Te-Se recording films and their mechanisms have been studied. The metals included In, Pb, Sn, Bi, and Sb. The films were deposited by multi-source, high-speed rotary evaporation on substrates with glass-U.V. light curing resin-cellulose nitrate or acetate structures. The role of Se is to inhibit the oxidation and the role of metallic elements are to inhibit cracking and to decrease noise in reproduced signals by making crystal grains smaller. Selection of substrate surface material, especially selection of U.V.light curing resin, is also important to avoid oxidation of the recording film. Depth profiles of the recording films have been analyzed by Auger electron spectroscopy and X-ray photoelectron spectroscopy to clarify the mechanisms of oxidation inhibition.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Motoyasu Terao, Shinkichi Horigome, Kazuo Shigematsu, Yasushi Miyauchi, and Masatoshi Nakazawa "Resistance To Oxidation Of Te-Se Optical Recording Films", Proc. SPIE 0382, Optical Data Storage, (1 January 1983);

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