20 September 1999 Resonant intracavity modulator for Q-switching a CO2 laser in a new parameter regime
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Proceedings Volume 3822, Computer-Controlled Microshaping; (1999) https://doi.org/10.1117/12.364223
Event: Industrial Lasers and Inspection (EUROPTO Series), 1999, Munich, Germany
In this paper we report on the development program of an original intracavity Q-switch for CO2 lasers, called Integrated Mirror Optical Switch (IMOS). The IMOS is based on the optical plasma resonance effect in a GaAs- semiconductor when the refractive index of a tens of nm's thin MBE grown n-GaAs (5-8X1018cm-3) layer is modulated by electronically controlling the electron density in the thin n-GaAs layer. A heterostructure diode is conceived to keep the power dissipation low. 15 to 30% modulation depth can be achieved for a depletion voltage of 15 V at 1 W power dissipation. Switching frequencies of more than 1 MHz were measured. These driving characteristics are very promising to turn a CO2 laser into an easily computer controlled and flexible-machining tool. In order to achieve this, the structure of the Q-switch needs to be adapted for intracavity usage. Q-switches operating in reflection and transmission are compared and discussed. Highly efficient coupling mechanisms are suggested. Special attention will be paid to the design of diffraction gratings.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Johan H. Stiens, Johan H. Stiens, W. Ranson, W. Ranson, C. De Tandt, C. De Tandt, Vladimir M. Kotov, Vladimir M. Kotov, Gustaaf Borghs, Gustaaf Borghs, Peter F. Muys, Peter F. Muys, Roger A. Vounckx, Roger A. Vounckx, } "Resonant intracavity modulator for Q-switching a CO2 laser in a new parameter regime", Proc. SPIE 3822, Computer-Controlled Microshaping, (20 September 1999); doi: 10.1117/12.364223; https://doi.org/10.1117/12.364223


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