9 September 1999 Electronic devices for nonlinear applications at terahertz frequency
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Proceedings Volume 3828, Terahertz Spectroscopy and Applications II; (1999); doi: 10.1117/12.361022
Event: Industrial Lasers and Inspection (EUROPTO Series), 1999, Munich, Germany
Abstract
The recent advances in telecommunication and teledetection systems are creating a demand for system developments in the upper part of the millimeter wave spectrum and beyond that available in this frequency range. It is thought that novel device schemes, relying on quantum effect,s will play an increasing role in this development. At last, new micromachining technologies are currently being developed for these wavelengths not only for the fabrication of passive components but also for active devices. This paper gives an overview of the Terahertz components, currently fabricated at IEMN, which are aimed at operating in THz receivers. This concerns mixers and harmonic multipliers, engineered for ultra-fast electron dynamics and strongly reactive and resistive non linearities. Special attention has been paid to high performance InP-based Heterostructure Barrier Varactors for harmonic multiplication. Double Barrier Heterostructure Resonant Tunnelling Didoes for fundamental generation and T-gate Schottky's for sub- harmonic mixing. Novel ideas will be presented in order to control the particle and displacement currents and to overcome the intrinsic and extrinsic limitations.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Lippens, "Electronic devices for nonlinear applications at terahertz frequency", Proc. SPIE 3828, Terahertz Spectroscopy and Applications II, (9 September 1999); doi: 10.1117/12.361022; https://doi.org/10.1117/12.361022
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KEYWORDS
Diodes

Heterojunctions

Indium gallium arsenide

Resistance

Capacitance

Bridges

Semiconductors

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