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9 September 1999 Free electron laser studies of carrier lifetime and lifetime design in semiconductors and ionic crystals
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Proceedings Volume 3828, Terahertz Spectroscopy and Applications II; (1999)
Event: Industrial Lasers and Inspection (EUROPTO Series), 1999, Munich, Germany
A brief review is given of pump-probe carrier lifetime studies with the free electron laser at FOM-Rijnhuizen, emphasizing work on mid-IR interband recombination in narrow gap semiconductors. We compare results on the lead salt system with earlier work on HgCdTe and As-rich InAs/InAsSb strained layer superlattices, where we have studied the suppression of Auger recombination by band structure engineering. The Auger coefficient for either the lead slat structures or the As-rich strained layer superlattice is suppressed by some 2 orders of magnitude by comparison with HgCdTe of an equivalent bandgap composition. In addition we have made time resolved studied of local modes in ionic crystals, where non-radiative decay plays an important role in the optical pumping cycle of laser gain media. We have studied the local modes created upon the introduction of a light impurity, in particular the H-ion, in CaF2 in the spectral region 700 to 1200 cm-1. We have employed a two pulse photon echo experiment to remove the inhomogeneous broadening of the vibrational ensemble and measure the transverse relaxation time.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carl R. Pidgeon, Jon-Paul Wells, I. V. Bradley, and B. N. Murdin "Free electron laser studies of carrier lifetime and lifetime design in semiconductors and ionic crystals", Proc. SPIE 3828, Terahertz Spectroscopy and Applications II, (9 September 1999);

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