9 September 1999 Investigation of phosphorus-doped silicon as a possible far-infrared laser material
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Proceedings Volume 3828, Terahertz Spectroscopy and Applications II; (1999) https://doi.org/10.1117/12.361069
Event: Industrial Lasers and Inspection (EUROPTO Series), 1999, Munich, Germany
Abstract
The observation of spontaneous emission from phosphorus doped Si with a doping concentration of 0.9 X 1015 cm-3 and 2 X 1015 cm-3 is reported. Population inversion between the 2p0 state and the 1s(T) and 1s(E) states was achieved by optically pumping with a CO2 laser. The spontaneous emission increased with pump power. Electrons could be excited from the 1p0 state into the conduction band due to the absorption of background radiation or radiation from a far-IR probe laser. The frequency dependence of the absorption is in agreement with the cross section for photon ionization of a transition from the 2p0 state into the conduction band.
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Heinz-Wilhelm Huebers, Karsten Auen, Sergei G. Pavlov, Ekaterina E. Orlova, R. Kh. Zhukavin, Valery N. Shastin, "Investigation of phosphorus-doped silicon as a possible far-infrared laser material", Proc. SPIE 3828, Terahertz Spectroscopy and Applications II, (9 September 1999); doi: 10.1117/12.361069; https://doi.org/10.1117/12.361069
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