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9 September 1999 Optimization of pulsed GaAs IMPATT diodes for 200 GHz
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Proceedings Volume 3828, Terahertz Spectroscopy and Applications II; (1999)
Event: Industrial Lasers and Inspection (EUROPTO Series), 1999, Munich, Germany
RF power generation of IMPATT diodes at mm-wave frequencies is limited mainly by thermal effects. The challenge to obtain output power at 200 GHz and above can be met only by extremely high DC current densities to push the characteristic avalanche frequency near to the oscillation frequency. The active devices have to be optimized with regard to pure IMPATT mode operation, low break-down voltage and efficient heat dissipation. Since these three conditions influence each other, a compromise is necessary. From theoretical simulations a double-drift Read IMPATT diode structure result which is capable to be operated at DC current densities up to 225 kA/cm2 for short pulses of 50 ns with maximum device temperatures below 500 K. The initial material is grown by MBE technique taking special care to control the thickness and doping concentration of the different GaAs layers. The individual devices are fabricated by standard photo-resist technology with an integrated gold cone on top which adjusts the encapsulation height in the used full height inductive post waveguide resonator. Thereby, a low loss device mounting in the resonator without parasitic elements and an optimum impedance matching of diode and resonator can be realized. By means of different double-drift Read IMPATT structures the experimental results in terms of RF output power, conversion efficiency. At a frequency of 210 GHz 0.25 W output power and 1.8 percent conversion efficiency were realized at a DC current density of 225 kA/cm2. The experimental result are in good agreement with calculations applying a pulsed oscillator model.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christian Benz, Juergen Freyer, and Helmut Grothe "Optimization of pulsed GaAs IMPATT diodes for 200 GHz", Proc. SPIE 3828, Terahertz Spectroscopy and Applications II, (9 September 1999);


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