9 September 1999 Spatially resolved optical measurements of electric terahertz signals on passive devices
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Proceedings Volume 3828, Terahertz Spectroscopy and Applications II; (1999) https://doi.org/10.1117/12.361043
Event: Industrial Lasers and Inspection (EUROPTO Series), 1999, Munich, Germany
Monolithic mm-wave integrated circuits have experienced strong improvements in operation frequencies in the last years. However, reports of III-V semiconductor transistors to have maximum frequencies as high as 400 GHz often stem from extrapolated measurements made at lower frequencies, due to bandwidth-limitations of the electronic equipment. The extrapolation of measurements at lower frequencies is insufficient for an accurate determination of the characteristics of passive or active elements in this frequency range. Another frequent restriction of conventional measurement techniques is that the signal can only be probed at specially designed interfaces. Optical sampling techniques allow the detection of electric fields with a high temporal and spatial resolution of 150 fs and 10 micrometers , respectively, at any point within or outside the device. In addition to S-parameter measurements at passive devices we demonstrate the spatial field distribution of an ultra-short electric pulse propagating through a band-stop filter with a broad stop-band probed via electrooptic sampling. To demonstrate the potentially high bandwidth of the measurement system the geometry of the stubs has been designed to show significant attenuation around a frequency f0 equals 350 GHz.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Nagel, Michael Nagel, Thomas Dekorsy, Thomas Dekorsy, Heinrich Kurz, Heinrich Kurz, "Spatially resolved optical measurements of electric terahertz signals on passive devices", Proc. SPIE 3828, Terahertz Spectroscopy and Applications II, (9 September 1999); doi: 10.1117/12.361043; https://doi.org/10.1117/12.361043

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