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9 September 1999 Unipolar semiconductor lasers: new class of devices for the generation of mid-infrared radiation
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Proceedings Volume 3828, Terahertz Spectroscopy and Applications II; (1999) https://doi.org/10.1117/12.361044
Event: Industrial Lasers and Inspection (EUROPTO Series), 1999, Munich, Germany
Abstract
Quantum cascade lasers are coherent light sources in the mid-IR spectral region. They are based on resonant tunneling and optical transitions between discrete energy levels in the conduction band arising form size quantization in semiconductor heterostructures. QCLs have been demonstrated on GaInAs/AlInAs/InP and GaAs/AlGaAs outperforming existing semiconductor laser technologies in the mid-IR spectral range. The present paper reports the realization of a QCL based on GaAs/AlGaAs material designed with an emission wavelength of 9.3 micrometers . Specific properties inherent to this material system and their influence on laser operation are discussed in detail. The paper concludes with the presentation of a new waveguide concept, which offers considerable performance improvements.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Kruck, Carlo Sirtori, Stefano Barbieri, Hideaki Page, Philippe Collot, Julien Nagle, Mattias Beck, Jerome Faist, and Ursula Oesterle "Unipolar semiconductor lasers: new class of devices for the generation of mid-infrared radiation", Proc. SPIE 3828, Terahertz Spectroscopy and Applications II, (9 September 1999); https://doi.org/10.1117/12.361044
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