26 November 1999 Novel x-cut lithium niobate intensity modulator with 10-G bandwidth
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Proceedings Volume 3847, Optical Devices for Fiber Communication; (1999) https://doi.org/10.1117/12.371243
Event: Photonics East '99, 1999, Boston, MA, United States
Abstract
To fabricate a low-driving voltage, high-speed x-cut lithium niobate modulator with 50-ohm electrode impedance, we introduce a novel design approach, which employs a patterned SiO2 buffer layer. Experimental results showed that the partial removal of SiO2 buffer layer was effective in both lowering driving voltage and suppressing dc-drift of the modulators.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasuyuki Miyama, Tohru Sugamata, Yoshihiro Hashimoto, Toshihiro Sakamoto, Hirotoshi Nagata, "Novel x-cut lithium niobate intensity modulator with 10-G bandwidth", Proc. SPIE 3847, Optical Devices for Fiber Communication, (26 November 1999); doi: 10.1117/12.371243; https://doi.org/10.1117/12.371243
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