Paper
9 August 1983 Laser Plasma X-Ray Source Optimization For Lithography
Harold M. Epstein, Philip J. Mallozzi, Bernerd E. Campbell
Author Affiliations +
Proceedings Volume 0385, Laser Processing of Semiconductor Devices; (1983) https://doi.org/10.1117/12.934968
Event: 1983 Los Angeles Technical Symposium, 1983, Los Angeles, United States
Abstract
The laser-plasma X-ray source has been evaluated for submicrometer X-ray lithography exposure machines. X-ray lithography systems based on commercially available lasers of reasonable cost appear to be feasible. Such machines would make full wafer exposures of silicon slices with a throughput consistent with current manufacturing requirements.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harold M. Epstein, Philip J. Mallozzi, and Bernerd E. Campbell "Laser Plasma X-Ray Source Optimization For Lithography", Proc. SPIE 0385, Laser Processing of Semiconductor Devices, (9 August 1983); https://doi.org/10.1117/12.934968
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Plasma

X-rays

Semiconducting wafers

Photomasks

X-ray sources

Pulsed laser operation

Copper

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