Novel Laser Scanning Techniques For Si-On-Insulator Devices

L. E. Trimble; G. K. Celler

doi:10.1117/12.934938

9 August 1983 Novel Laser Scanning Techniques For Si-On-Insulator Devices

L. E. Trimble, G. K. Celler

Proceedings Volume 0385, Laser Processing of Semiconductor Devices; (1983) https://doi.org/10.1117/12.934938
Event: 1983 Los Angeles Technical Symposium, 1983, Los Angeles, United States

Abstract

Recent developments are reported for the conversion of polysilicon layers on SiO₂ into device-worthy, large grain or single crystalline Si-on-Insulator material, using a cw Ar laser. The advantages of beam shaping and of oscillation of the growth front are shown. Finally, the utility of rapid laser scanning (1-10 m/sec) is reported, and the practical limitatibns of this technique are defined.

Citation Download Citation

L. E. Trimble and G. K. Celler "Novel Laser Scanning Techniques For Si-On-Insulator Devices", Proc. SPIE 0385, Laser Processing of Semiconductor Devices, (9 August 1983); https://doi.org/10.1117/12.934938

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