Paper
15 December 1999 Localized moderate-temperature Er3+doping into optical crystals
Pavla Nekvindova, Jarmila Spirkova-Hradilova, Josef Schroefel, Martin Slunecko, Vratislav Perina, Jiri Vacik
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Abstract
Possibility of localized doping by Er3+ diffusion at moderate (less than 500 degree(s)C) temperature is demonstrated for lithium niobate and sapphire. The doping is achieved by immersing the substrate wafers into reaction melt containing small amounts of erbium salt. A crucial point of the presented technology is a crystallographic orientation of the used wafers. Though in the Z- and Y-cuts of lithium niobate the content of incorporated erbium did not exceed the concentration achieved using standard high temperature (or high energy) approaches, lithium niobate X-cuts contained up to 10 weight % of erbium. Similar results were obtained also for the corresponding cuts of sapphire. This strong anisotropy of the doping is explained on the basis of crystal structure of the particular cuts. The in-diffused layers in all the cuts are rather shallow, however, erbium can be diffused deeper into the substrates by post-diffusion annealing in air. The moderate-temperature approach enabled us to fabricate APE waveguides in erbium doped lithium niobate without deteriorating the samples surfaces. The samples were characterized by RBS, SEM, NDP and mode spectroscopy.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pavla Nekvindova, Jarmila Spirkova-Hradilova, Josef Schroefel, Martin Slunecko, Vratislav Perina, and Jiri Vacik "Localized moderate-temperature Er3+doping into optical crystals", Proc. SPIE 3858, Advanced Materials and Optical Systems for Chemical and Biological Detection, (15 December 1999); https://doi.org/10.1117/12.372916
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Cited by 2 scholarly publications.
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KEYWORDS
Erbium

Lithium niobate

Diffusion

Semiconducting wafers

Doping

Crystals

Ions

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