13 December 1999 94-GHz MMIC CPW low-noise amplifier on InP
Author Affiliations +
Proceedings Volume 3861, Gigahertz Devices and Systems; (1999) https://doi.org/10.1117/12.373017
Event: Photonics East '99, 1999, Boston, MA, United States
High performances have been achieved at W-band with a 2- stage, 0.1 micrometers gate-length InGaAs/InAlAs/InP LM-HEMT MMIC low noise amplifier in coplanar technology. To obtain the T- gate profile, we use silicon nitride SixNy technology, which leads to naturally passivated devices. For a drain-to-source current Ids equals 350 mA/mm the devices demonstrate a maximum intrinsic transconductance Gm of 1600 mS/mm and an intrinsic current gain cutoff frequency Fc equals 220 GHz. The extrinsic current gain cut-off frequency Ft is 175 GHz. The LNA shows a minimum noise figure of 3.3 dB with an associated gain of 11.5 dB at 94 GHz.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gilles Dambrine, Gilles Dambrine, Virginie Hoel, Virginie Hoel, Samuel Boret, Samuel Boret, Bertrand Grimbert, Bertrand Grimbert, Sylvain Bollaert, Sylvain Bollaert, Xavier Wallart, Xavier Wallart, Sylvie Lepilliet, Sylvie Lepilliet, Alain Cappy, Alain Cappy, } "94-GHz MMIC CPW low-noise amplifier on InP", Proc. SPIE 3861, Gigahertz Devices and Systems, (13 December 1999); doi: 10.1117/12.373017; https://doi.org/10.1117/12.373017


Back to Top