Paper
13 December 1999 Ka-band monolithic GaAs PHEMT low-noise amplifiers for commercial wireless applications
Huei Wang, Tzu-Hung Chen, D.C. Niu, Yi-Jen Chan, P.W. Kuo, H.S. Chou, K.L. Deng
Author Affiliations +
Proceedings Volume 3861, Gigahertz Devices and Systems; (1999) https://doi.org/10.1117/12.373020
Event: Photonics East '99, 1999, Boston, MA, United States
Abstract
This paper presents the development of a one-stage and a two-stage Ka-band monolithic LNA for commercial wireless communication applications. The monolithic microwave/millimeter-wave integrated circuits (MMICs) are fabricated with a 0.2-micrometers pseudomorphic GaAs-based HEMT technology, carried out by commercially available foundry. The one-stage amplifier demonstrated a measured small signal gain of 9.5 dB with a noise figure (NF) of 2.7 dB at 28 GHz, while the two-stage amplifier has a measured gain of 17 dB with 3.3 dB NF at 28 GHz. Due to fabrication with the commercial foundry process, these MMICs have the potential for mass production.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Huei Wang, Tzu-Hung Chen, D.C. Niu, Yi-Jen Chan, P.W. Kuo, H.S. Chou, and K.L. Deng "Ka-band monolithic GaAs PHEMT low-noise amplifiers for commercial wireless applications", Proc. SPIE 3861, Gigahertz Devices and Systems, (13 December 1999); https://doi.org/10.1117/12.373020
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KEYWORDS
Amplifiers

Interference (communication)

Ka band

Field effect transistors

Gallium arsenide

Instrument modeling

Signal attenuation

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