Characterization Of Interfaces In Ion Implanted And Processed Semiconductor

D. K. Sadana

doi:10.1117/12.934989

8 November 1983 Characterization Of Interfaces In Ion Implanted And Processed Semiconductor

D. K. Sadana

Proceedings Volume 0387, Technology of Stratified Media; (1983) https://doi.org/10.1117/12.934989
Event: 1983 Los Angeles Technical Symposium, 1983, Los Angeles, United States

Abstract

This review covers the two key aspects of ion implantation: 1. damage production in a crystalline Si substrate and eventual amorphization of damaged region of the substrate and, 2. the recrystallization of the damaged layers. The latter has been divided into two separate topics; recrystallization behavior of damage in bare-implantated Si substrates and in through-oxide implanted Si substrates. Pictorial examples (TEM micrographs) of recrystallization behavior of various types of damage structure on furnace, laser and rapid thermal annealing are given in the text. The effect of secondary defects on redistribution of impurities has been illustrated. The electrical properties of the implanted region has been explained by considering damage-impurity interactions.

Citation Download Citation

D. K. Sadana "Characterization Of Interfaces In Ion Implanted And Processed Semiconductor", Proc. SPIE 0387, Technology of Stratified Media, (8 November 1983); https://doi.org/10.1117/12.934989

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