Translator Disclaimer
28 December 1999 Fast calculation of the temperature of HgCdTe irradiated with a pulsed laser
Author Affiliations +
Abstract
Computer simulation is often adapted to learn the temperature change behavior during the interaction between the pulsed laser and HgCdTe. Although the speed of the computer processor is faster and faster, a proper computation method remains critical for an effective simulation. A main hurdle in the conventional calculation is related to the number of layers, which must be estimated before calculation in this paper, a new method to calculation the temperature of HgCdTe irradiated pulsed laser was proposed. Namely, a few layers were considered firstly until the temperature profile fulfilled a certain condition, then some additional layers were considered. With some minor factors neglected, the calculation is faster than the conventional one. By comparing these two different kinds of calculation, it is suggested the new method can be used for fast simulation of the temperature behavior during the interaction between HgCdTe and pulsed laser.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiangyang Li and Jiaxiong Fang "Fast calculation of the temperature of HgCdTe irradiated with a pulsed laser", Proc. SPIE 3870, Sensors, Systems, and Next-Generation Satellites III, (28 December 1999); https://doi.org/10.1117/12.373178
PROCEEDINGS
4 PAGES


SHARE
Advertisement
Advertisement
Back to Top