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Electron-beam lithography simulation for mask making: V. Impact of GHOST proximity effect correction on process window
Characterization of a non-chemically amplified resist for photomask fabrication using a 257-nm optical pattern generator
Integration of optical proximity correction strategies in strong phase shifters design for poly-gate layers
Realization of practical attenuated phase-shift mask with high-transmission KrF excimer laser exposure
Transmission and phase balancing of alternating phase-shifting masks (5x): theoretical and experimental results
Comparison of at-wavelenth inspection, printability, and simulation of nanometer-scale substrate defects in extreme ultraviolet lithography (EUVL)
Lithography simulation of sub-0.30-μm resist features for photomask fabrication using i-line optical pattern generators