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30 December 1999 CD error sensitivity to "sub-killer" defects at k1 near 0.4: II
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Recent observations indicate that CD control for the 0.18 micrometer process generation using KrF exposure (k1 equals 0.41) could be sensitive to borderline detectable defect sizes (200 to 300 nm) on a 4X reticle. It is of interest to determine if these 'sub-killer' defect sizes can become process window limiting. It is also important to determine if CD error is sensitive to the interaction between defects and scattering bar (SB) OPC features. The experiment was based on a typical 0.18 micrometer process using the Defect Sensitivity Monitor (DSM) Reticle -- designed by MaskTools and manufactured by Photronics. Printed wafer data was presented previously on isolated feature cases. Here, data is presented on dense feature cases. In agreement with earlier isolated data, greater than 10% printed CD error was found for defects occurring on the main feature such as a 200 nm bump or a 250 nm divot on a 4X reticle. Greater than 6% of the exposure latitude can be lost due to plus or minus 50 nm (4X) mask feature width deviations.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kent H. Nakagawa, J. Fung Chen, Robert John Socha, Mircea V. Dusa, Thomas L. Laidig, Kurt E. Wampler, Roger F. Caldwell, and Douglas J. Van Den Broeke "CD error sensitivity to "sub-killer" defects at k1 near 0.4: II", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999);

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