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30 December 1999 Carbon stain effects from SEM exposure
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Abstract
Due to resolution limitations in optical measurement technology, electron microscopy is becoming the preferred method of metrology for reticles. In addition, electron microscopy provides an excellent means for imaging and defect analysis. Therefore, the use of Scanning Electron Microscopes (SEM) on photomasks is increasing, and will continue to do so as feature sizes reduce. One disadvantage to this technology is the deposition of carbon in the exposure area. Experiments were conducted to quantify transmission loss, feature size variation, and stain thickness as a result of this deposition. Results suggest that minimal SEM exposure, including single measurements and imaging, has a negligible effect on the properties tested. Significant changes in transmission and feature size were noticed after multiple exposures. Experiments were conducted to remove the carbon stain, in an attempt to return the masks to the pre-exposure conditions.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John Grantz, Robert K. Henderson, and James L. Wood "Carbon stain effects from SEM exposure", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); https://doi.org/10.1117/12.373364
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