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30 December 1999 Chemically amplified positive resist for next-generation photomask fabrication
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We have been developing novolak-based chemically amplified positive resists for the next generation photomask fabrication. In this paper, we report two different types of EB resists: RE-5150P and RE-5160P. Our resist materials consist of four components: a novolak matrix resin, a polyphenol compound, an acid generator and a dissolution inhibitor. We applied two different types of dissolution inhibitors to our resist materials. RE-5150P and RE-5160P employed respective a high and a low activation energy type of a dissolution inhibitor. RE-5150P has high contrast and RE- 5160P has wide process window. As a result, we confirmed RE- 5150P could achieve 0.24 micrometer line-and-space vertical resist pattern profiles at 8 (mu) C/cm2 using the 50 kV EB- writer HL-800M, and RE-5160P has wide process window: post exposure delay stability is over 24 hrs. and post coating delay stability is over 30 days.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kohji Katoh, Kei Kasuya, Tadashi Arai, Toshio Sakamizu, Hidetoshi Satoh, Hidetaka Saitoh, and Morihisa Hoga "Chemically amplified positive resist for next-generation photomask fabrication", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999);

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