30 December 1999 Definition of new quality criteria and assessment means for masks at 150-nm design rules and beyond
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Abstract
Low-k1 lithography requires enhancement techniques like phase shift and OPC. These techniques impose new and challenging specifications on photomasks. A development to establish means and methods to verify corner rounding, line end shortening, defect printability and the size of jogs, serifs and assist lines in a production worthy manner is based on the assessment of mask production data through a new cluster software tool which combines the output data of a mask defect inspection system, a CD metrology system, an AIMS based mask review station and printing simulation results. Possible definitions of new type photomask quality criteria are discussed and measurement procedures are proposed. As a key application the review of critical features on reticles (OPC, classical defects, contact printability, etc.) at changing stepper conditions ((lambda) , N.A., (sigma) ) is discussed. The concept and the development status of a Photomask Qualification Cluster is presented and early performance results are examined against the target values which are a defect detection sensitivity of 125 nm, optical resolution of 200 nm lines for assist line assessment, CD measurement on lines, contacts and OPC structures with 5 nm repeatability and mask pattern fidelity assessment at printing conditions down to 500 nm lines at reticle level.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emanuele Baracchi, Emanuele Baracchi, Hans-Juergen Brueck, Hans-Juergen Brueck, Thomas Engel, Thomas Engel, Yair Eran, Yair Eran, Frederic P. Lalanne, Frederic P. Lalanne, Olivier Maurin, Olivier Maurin, Volodymyr Ordynskyy, Volodymyr Ordynskyy, Thomas Schaetz, Thomas Schaetz, Karl Sommer, Karl Sommer, } "Definition of new quality criteria and assessment means for masks at 150-nm design rules and beyond", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373312; https://doi.org/10.1117/12.373312
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