30 December 1999 Development of simplified process for KrF excimer halftone mask with chrome-shielding method
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Abstract
New simplified process is developed successfully for KrF excimer half-tone mask with chrome shielding method. Process times are reduced to half compared with conventional process in which resist coating and exposure is performed twice. New simplified process is characterized by adopting half-exposure of electron beam, thin chrome film on a half-tone film, and endpoint detection in dry etching process. It is confirmed in this paper that half-tone masks fabricated by simplified process have mask quality and optical capability, which are required in 0.18 micrometer generation devices.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shinji Kobayashi, Shinji Kobayashi, N. Oka, N. Oka, Kunio Watanabe, Kunio Watanabe, Kiyochige Ohmori, Kiyochige Ohmori, M. Inoue, M. Inoue, K. Iguchi, K. Iguchi, "Development of simplified process for KrF excimer halftone mask with chrome-shielding method", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373323; https://doi.org/10.1117/12.373323
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