30 December 1999 Dry etch yield enhancement by use of after-develop inspection
Author Affiliations +
Decreasing feature sizes combined with high mask error enhancement factors (MEEF) are rapidly causing tighter defect and CD uniformity specifications on photomasks. In general, dry etching photomasks improves feature fidelity but also tends to increase defectivity. Since the first automated mask defect inspection usually occurs after chrome etch, it is difficult to determine if a defect originated with the photoblank or during one of the mask patterning steps (write, develop, and etch). To understand and optimize the dry etch process, After Develop Inspection (ADI) has been developed to isolate the cause of photomask defects. In this study, ADI was used to inspect Cr photomasks incorporating iP3600 and ZEP7000 resists at several thicknesses. The detected defects were analyzed and compared to defects found after etch. A test mask with programmed defects was also created and tested to characterize the sensitivity of this new capability.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Franklin D. Kalk, Keith J. Brankner, Lori Peters, Anthony Vacca, Scott Pomeroy, David Emery, "Dry etch yield enhancement by use of after-develop inspection", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373306; https://doi.org/10.1117/12.373306


Improving reticle yields with after develop inspection (ADI)
Proceedings of SPIE (February 03 2000)
Investigation of Cr defect in high Cr load logic mask
Proceedings of SPIE (August 20 2004)
EUV mask development status at ASET and DNP
Proceedings of SPIE (May 20 2006)
Review of defect round table at Photomask Japan '96
Proceedings of SPIE (December 27 1996)
Two-step etching process for small-size pattern
Proceedings of SPIE (September 01 1998)
Application of dry etching process on high-end Cr photomasks
Proceedings of SPIE (September 01 1998)

Back to Top