Dry etching technology of Cr films to produce fine-pattern reticles under 720 nm with ZEP-7000

Hitoshi Handa; Satoshi Yamauchi; Kouji Hosono; Yutaka Miyahara

doi:10.1117/12.373299

30 December 1999 Dry etching technology of Cr films to produce fine-pattern reticles under 720 nm with ZEP-7000

Hitoshi Handa, Satoshi Yamauchi, Kouji Hosono, Yutaka Miyahara

Proceedings Volume 3873, 19th Annual Symposium on Photomask Technology; (1999) https://doi.org/10.1117/12.373299
Event: Photomask Technology and Management, 1999, Monterey, CA, United States

Abstract

Process optimizations have been done to produce 'Fine Pattern' reticles whose minimum target sizes are under 720 nm. 'Zero Bias' process for binary Cr reticles can be achieved with our dry etching process using ZEP-7000 blanks. MEBES-4500 exposure on resist films of 300 nm and dry etching with Magnetic Enhanced Reactive Ion Etching (MERIE) system are adopted. It is shown that adjusted develop condition weakens thinning effect of resist in sub-micron area due to proximity effect of exposure, and MERIE system with Gas Assist Etching (GAE) also improves pattern resolution. CD shift due to 'Loading Effect' is small and resist patterns are perfectly printed as Cr pattern with negligible deterioration of CD linearity. Much improved CD distribution in the area of 132 mm square can be obtained. In production of MoSiON-based attenuated-PSM (Att- PSM), CD shifts between Cr and MoSiON except OPC patterns (such as serif and scattering-bar) can be estimated about 30 nm. It is also shown that there are few defects after dry etching, and 'Zero Defect' reticles are obtained in most cases. Through the all results, validity and probability of our process to produce 'Fine Pattern Reticles' near the half- micron are discussed.

Citation Download Citation

Hitoshi Handa, Satoshi Yamauchi, Kouji Hosono, and Yutaka Miyahara "Dry etching technology of Cr films to produce fine-pattern reticles under 720 nm with ZEP-7000", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); https://doi.org/10.1117/12.373299

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