An advanced electron beam mask-writing system, with a high accelerating voltage (50kV) (EBM-210VS/Toshiba Machine, Ltd) was evaluated to meet the 130 nm node requirements. The system adopts accelerating voltage of 50 kV, variable shaped beam, vector scanning, continuous moving stage, and 230 mm mask capability. This paper presents the evaluation results of pattern positioning accuracy, stitching accuracy and CD accuracy et al. To avoid the influence of resist heating, the high sensitivity chemically amplified resists, NEB-22 (Sumitomo chemical, Ltd) and RE514OP (Hitachi chemical, Ltd) are used. These exposure doses are 11 (mu) C/cm2 (NEB-22) and 6 (mu) C/cm2 (RE514OP) for 50 kV electron beam. The writing strategy is four-pass exposures. The Proximity Effect Correction (PEC) of the representative figure method is performed prior to writing.