30 December 1999 Fabrication process of Cr-based attenuated phase-shift masks for KrF excimer laser lithography
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Abstract
We have developed a Cr-based attenuated phase shift mask process for 0.18 micrometer device generation. The fabrication process including formation of opaque patterns with an electric conductive material is introduced. With a Cr-based attenuated phase shifter material, it is possible to adjust phase angle using a post process of quartz etching after mask defect inspection. Phase and transmittance control satisfied requirements for attenuated phase shift masks (att-PSMs) of 0.18 micrometer generation. Preliminary investigation of printability for after repair of a small clear defect with a conventional focus ion beam (FIB) carbon deposition film is reported. A positive carbon deposition bias is effective to obtain a larger common ED-window, and a more feasible ED- window can be obtained with a thinner carbon deposition film. Such a clear defect repair technique is indispensable in att- PSM fabrication.
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Ichiro Kagami, Kiichi Ishikawa, Daichi Kakuta, Hiroichi Kawahira, "Fabrication process of Cr-based attenuated phase-shift masks for KrF excimer laser lithography", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373387; https://doi.org/10.1117/12.373387
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