Formation and detection of subpellicle defects by exposure to DUV system illumination

Brian J. Grenon; Charles R. Peters; Kaustuve Bhattacharyya; William Waters Volk

doi:10.1117/12.373311

30 December 1999 Formation and detection of subpellicle defects by exposure to DUV system illumination

Brian J. Grenon, Charles R. Peters, Kaustuve Bhattacharyya, William Waters Volk

Proceedings Volume 3873, 19th Annual Symposium on Photomask Technology; (1999) https://doi.org/10.1117/12.373311
Event: Photomask Technology and Management, 1999, Monterey, CA, United States

Abstract

As DUV lithography becomes more ubiquitous in the manufacture of semiconductors, the importance of detecting mask anomalies that can be attributed to the exposure of mask materials to 248 nm exposure becomes necessary. The requirement to find and eliminate the sources of these types of defects becomes even more important with low k₁ lithography. The authors wish to report a new class of defects that can significantly impact mask performance and semiconductor chip manufacturing yields. This paper will discuss the techniques and defect detection systems used to identify the presence of these sub-pellicle (or pellicle-related) defects. Additionally, the mechanism of defect formation and micro-analytical results identifying both the composition and possible sources of the defects will be presented.

Citation Download Citation

Brian J. Grenon, Charles R. Peters, Kaustuve Bhattacharyya, and William Waters Volk "Formation and detection of subpellicle defects by exposure to DUV system illumination", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); https://doi.org/10.1117/12.373311

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