30 December 1999 Formation and detection of subpellicle defects by exposure to DUV system illumination
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As DUV lithography becomes more ubiquitous in the manufacture of semiconductors, the importance of detecting mask anomalies that can be attributed to the exposure of mask materials to 248 nm exposure becomes necessary. The requirement to find and eliminate the sources of these types of defects becomes even more important with low k1 lithography. The authors wish to report a new class of defects that can significantly impact mask performance and semiconductor chip manufacturing yields. This paper will discuss the techniques and defect detection systems used to identify the presence of these sub-pellicle (or pellicle-related) defects. Additionally, the mechanism of defect formation and micro-analytical results identifying both the composition and possible sources of the defects will be presented.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brian J. Grenon, Brian J. Grenon, Charles R. Peters, Charles R. Peters, Kaustuve Bhattacharyya, Kaustuve Bhattacharyya, William Waters Volk, William Waters Volk, } "Formation and detection of subpellicle defects by exposure to DUV system illumination", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373311; https://doi.org/10.1117/12.373311


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