Paper
30 December 1999 High-resolution thickness measurements and evaluation of a photomask blank
Teruyoshi Hirano, Ryuji Matsuo, Kozue Tomiyama, Ichiro Yazawa, Hiroshi Wada, Masao Otaki, Kazuhiko Omote
Author Affiliations +
Abstract
The film thickness estimation is one of most important subject for the design up of photomask blanks. For control of photomask specifications, the thickness measurement technology is the key of well-designed photomask blanks. The grazing- incidence X-ray reflectivity technology is very useful in order to measure thickness, density and interface roughness of photomask blank. In this paper, we reported the adaptation of the X-ray reflectivity technology to photomask evaluation. A Cr and ZrSi oxide thin photomask blanks were prepared with DC sputtering method. The X-ray reflectivities of those photomask blanks were measured with RIGAKU ATX-E diffractometer system. The thicknesses and densities of the photomask blanks were calculated with RIGAKU XDD degree(s) program. The coincidence between the calculated X-ray reflectivity curves with surface modified model which was defined with a surface oxidized layer is better than the calculated results without a surface oxidized layer. These results indicate that the photomask blanks have a surface oxidized layer. Thicknesses of the same position with same films were measured by ordinary technologies, for example, microscopic observation and thickness measurement technologies. The accuracy of those layer parameters which were calculated with X-ray reflectivity curves were better than those parameters measured with other microscopic and thickness measurement technologies.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Teruyoshi Hirano, Ryuji Matsuo, Kozue Tomiyama, Ichiro Yazawa, Hiroshi Wada, Masao Otaki, and Kazuhiko Omote "High-resolution thickness measurements and evaluation of a photomask blank", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); https://doi.org/10.1117/12.373351
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

X-rays

Reflectivity

Scanning electron microscopy

X-ray technology

Interfaces

Chromium

RELATED CONTENT

Ion assisted magnetron sputter deposition of B4C doped Ni Ti...
Proceedings of SPIE (September 21 2018)
EUVL mask patterning with blanks from commercial suppliers
Proceedings of SPIE (December 06 2004)
Two-step etching process for small-size pattern
Proceedings of SPIE (September 01 1998)
Application of chemically amplified resist to 10 keV e beam...
Proceedings of SPIE (September 05 2001)
Total evaluation of W-Ti absorber for x-ray mask
Proceedings of SPIE (May 13 1994)

Back to Top