30 December 1999 Next-generation lithography mask development at the NGL Mask Center of Competency
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Mask fabrication is one of the difficult challenges with all Next Generation Lithography (NGL) technologies. X-ray, e-beam projection, and ion-beam projection lithography all use some form of membrane mask, and extreme ultraviolet (EUV) lithography uses a reflective mask. Despite some differences, the various mask technologies share some common features and present similar fabrication difficulties. Over the past several years, the IBM Advanced Mask Facility (AMF) has focused on the fabrication of x-ray masks. Several key accomplishments have been demonstrated including fabricating masks with critical dimensions (CD) as small as 75 nm, producing line monitor masks in a pilot line mode to evaluate mask yields, and fabricating masks to make working microprocessors with the gate level defined by x-ray lithography. The experience on fabricating 1X x-ray masks is now being applied to the other NGL mask technologies. Progress on membrane and absorber materials can be applied to all the technologies, and patterning with advanced e-beam writing with chemically amplified resists utilizes learning from writing and baking on x-ray membrane masks.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael J. Lercel, Michael J. Lercel, Cameron J. Brooks, Cameron J. Brooks, Kenneth C. Racette, Kenneth C. Racette, Christopher Magg, Christopher Magg, Mark Lawliss, Mark Lawliss, Neal Caldwell, Neal Caldwell, Raymond Jeffer, Raymond Jeffer, Kevin W. Collins, Kevin W. Collins, Monica Barrett, Monica Barrett, Steven C. Nash, Steven C. Nash, Michael J. Trybendis, Michael J. Trybendis, Lucien Bouchard, Lucien Bouchard, } "Next-generation lithography mask development at the NGL Mask Center of Competency", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373374; https://doi.org/10.1117/12.373374


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