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30 December 1999 Optimization of ZEP 7000 writing and development conditions
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Advanced reticule specifications for 150 nm generation devices require large-scale improvements to resolution and critical dimension (CD) control. Resolution can be obtained by the adoption of electron-beam (e-beam) exposure and plasma etching with zero bias processes. However, CD control cannot be achieved without a writing and development strategy optimization. This paper describes the optimization of the key parameters (exposure and development) needed to reach CD uniformity below 20 nm necessary for 150 nm generation devices. The three factors (exposure dose, spot size and development time) were investigated by design of experiment (DOE). ZEP 7000 is an e-beam dry-etchable resist which requires higher dose than PBS and EBR-9 HS-31 usual e-beam resists. Therefore the exposure was made on a MEBES 4500 system combined with multipass gray (MPG) writing strategy. A puddle development was done on a STEAG ASE500 tool. CD measurements have been done after development on LEICA IPRO system using reflective light in order to eliminate the error induced by etching. The DOE results have been interpreted separately on the X and Y axis. The results of the DOE have been verified by measuring the edge resist slope with a scanning electron microscope (SEM) and by measuring chrome CD uniformity after dry etching and stripping.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel Courboin, Philippe Gervot, Chantal Gayou, and Patrick Montarou "Optimization of ZEP 7000 writing and development conditions", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999);

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