30 December 1999 Plasma etch of binary Cr masks: CD uniformity study of photomasks utilizing varying Cr loads
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Abstract
The use of Plasma Etch in patterning Binary Cr layers for modern reduction reticles has seen dramatic increase in the past two years. The drive towards the 0.25 micrometer and 0.18 micrometer technology has rendered wet etch of Binary Cr inadequate for the demanding gate level designs of most advanced devices. The use of dry etch for these patterns is studied closely through the pattern loading within a mask (Exposed Cr Load). It has been seen that Cr Load strongly affects several plasma etch responses, e.g.: resist selectivity, Cr etch rate, overall CD Uniformity and within- Mask CD Uniformity pattern.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris Constantine, Russell J. Westerman, and Jason Plumhoff "Plasma etch of binary Cr masks: CD uniformity study of photomasks utilizing varying Cr loads", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373288; https://doi.org/10.1117/12.373288
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