30 December 1999 Practical technology path to sub-0.10-μm process generations via enhanced optical lithography
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Abstract
An envisioned technology path to sub-0.1 micrometer process generations is first presented. OPC, PSM, and custom illumination apertures are all able to enhance the performance of the optical lithography. By integrating the use of these resolution enhancement technologies, it is possible to develop a production-worthy process that has sufficient overlapping process windows for all feature pitches. Critical dimension control is the key issue for sub-(lambda) process generations. The potential causes that can undermine CD control are discussed, and methods to minimize the problem are proposed. In addition to printing poly gate features, a method to print sub-(lambda) contact/via hole features is described. An outlook for meeting the technology challenges is discussed with conclusions.
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J. Fung Chen, Thomas L. Laidig, Kurt E. Wampler, Roger F. Caldwell, Kent H. Nakagawa, Armin Liebchen, "Practical technology path to sub-0.10-μm process generations via enhanced optical lithography", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373297; https://doi.org/10.1117/12.373297
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