30 December 1999 Use of programmed multilayer defects in validating a defect compensation strategy for EUV lithography
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We propose the use of optical proximity correction on absorber features to compensate for the effect of sub-resolution multilayer defects that would otherwise induce a critical error in linewidth. A series of defect printability and compensation experiments utilizing programmed multilayer defects are presented which demonstrate this approach. The amount of absorber removal for defect compensation depends on system imaging performance and the quality of the absorber removal process. A process flow for the mask fabrication, defect characterization and compensation is presented.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Avijit K. Ray-Chaudhuri, Avijit K. Ray-Chaudhuri, Gregory Frank Cardinale, Gregory Frank Cardinale, Aaron Fisher, Aaron Fisher, Pawitter J. S. Mangat, Pawitter J. S. Mangat, Ted Liang, Ted Liang, Donald W. Sweeney, Donald W. Sweeney, } "Use of programmed multilayer defects in validating a defect compensation strategy for EUV lithography", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373378; https://doi.org/10.1117/12.373378


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