30 December 1999 ZrSiO: a new and robust material for attenuated phase-shift mask in ArF lithography
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We propose zirconium silicon oxide (ZrSiO) film as a powerful candidate for attenuated phase-shift mask (Att-PSM) materials. A bi-layer structure of this material with an absorptive film (AF) and a transparent film (TF) can effectively control the transmittance and phase. We confirmed the durability of the ZrSiO film in ArF laser irradiation. The lifetime with the change in transmittance and phase after irradiation at 30 kJ(DOT)cm-2 is equivalent to a total dose of 3 years in future ArF exposure systems. We investigated the resolution performance of the Att-PSM with ZrSiO film for a 130 nm pattern. The depth of focus with the Att-PSM was larger than that of the binary mask. Therefore, an Att-PSM with ZrSiO is promising for developing a 130-nm-technology node with ArF lithography. Controllability of the critical dimension on the wafer is discussed from the viewpoint of the mask error factor (MEF).
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshio Onodera, Takahiro Matsuo, Keisuke Nakazawa, Junji Miyazaki, Tohru Ogawa, Hiroaki Morimoto, Takashi Haraguchi, Nobuhiko Fukuhara, Tadashi Matsuo, Masao Otaki, Susumu Takeuchi, "ZrSiO: a new and robust material for attenuated phase-shift mask in ArF lithography", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373329; https://doi.org/10.1117/12.373329

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