30 August 1999 Evidence of dislocations for the control of roughness of highly thermal boron-doped diffused silicon layers
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Proceedings Volume 3874, Micromachining and Microfabrication Process Technology V; (1999) https://doi.org/10.1117/12.361244
Event: Symposium on Micromachining and Microfabrication, 1999, Santa Clara, CA, United States
Abstract
Silicon doped by thermal diffusion from Boron+ solid source at different temperature employing both dry and wet processes was obtained for bulk micromachining applications. It could observe that the surface morphology was strong influenced by temperature and ambient-related effects are non-important. For low annealing temperature, the prominent effects are due to segregation phenomena of boron in silicon. At higher temperature impurity segregation is inhibited and the defects formation becomes the main effect. For B+ diffused layers at 1100 degrees C on dry oxygen ambient for 60 min. we obtained a uniform redistribution of the defects and the size is reduced. The redistribution of the defects is correlated with the surface roughness studied by atomic force microscopy and optical microscopy.
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Elena Manea, Elena Manea, Ralu Divan, Ralu Divan, Ileana Cernica, Ileana Cernica, "Evidence of dislocations for the control of roughness of highly thermal boron-doped diffused silicon layers", Proc. SPIE 3874, Micromachining and Microfabrication Process Technology V, (30 August 1999); doi: 10.1117/12.361244; https://doi.org/10.1117/12.361244
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