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30 August 1999 New design methodologies in (111)-oriented silicon wafers
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Proceedings Volume 3874, Micromachining and Microfabrication Process Technology V; (1999) https://doi.org/10.1117/12.361243
Event: Symposium on Micromachining and Microfabrication, 1999, Santa Clara, CA, United States
Abstract
New methodologies in anisotropic wet-chemical etching of oriented silicon allowing useful process designs combined with smart mask-to crystal-orientation-alignment are presented. The described methods yield smooth, etch-step free surfaces as well as high-quality plan-parallel beams and membranes. With a combination of pre-etching at different depths and passivation steps, structures can be etched at different levels in a wafer. Design rules using the < 100 >-crystal orientation, supplemented with examples demonstrate the high potential of using < 100 > oriented wafers in microsystem design.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Edwin Oosterbroek, J. W. Berenschot, A. J. Nijdam, Gregory Pandraud, Miko C. Elwenspoek, and Albert van den Berg "New design methodologies in (111)-oriented silicon wafers", Proc. SPIE 3874, Micromachining and Microfabrication Process Technology V, (30 August 1999); doi: 10.1117/12.361243; https://doi.org/10.1117/12.361243
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