Work in materials other than silicon for MEMS applications has typically been restricted to materials such as metals and not more 'exotic' semiconductors. However, group III-V and II-VI semiconductors from a very important and versatile collection of material and electronic parameter variables available to the MEMS and MEMS designer. Thus, not only are the traditional mechanical material variables available, but also chemical constituents can be varied in ternary and quaternary materials. This flexibility can be extremely important for both friction and chemical compatibility issues for MEMS. In addition, the ability to continually vary the bandgap energy can be particularly useful for many electronics and IR detection applications. However, there are two major obstacles associated with alternate semiconductor material MEMS. The first issue is the actual fabrication of non-silicon devices and the second impediment is communicating with these novel devices. We will describe an essential material independent fabrication method that is amenable to most group III-V and II-VI semiconductors. This technique uses a combination of non-traditional direct write precision fabrication processes such as diamond turning, ion milling, laser ablation, etc. This type of deterministic fabrication approach lends itself to an almost trivial assembly process. We will also describe the mechanical, electrical, and optical self-aligning hybridization technique used for these alternate material MEMS.