30 August 1999 Reproducibility data on SUMMiT
Author Affiliations +
Proceedings Volume 3874, Micromachining and Microfabrication Process Technology V; (1999) https://doi.org/10.1117/12.361210
Event: Symposium on Micromachining and Microfabrication, 1999, Santa Clara, CA, United States
SUMMiT at the Sandia National Laboratories' MDL is a standardized MEMS technology that allows designers to fabricate concept prototypes. This technology provides four polysilicon layers plus three sacrificial oxide layers to enable fabrication of complex mechanical systems-on-a-chip. Quantified reproducibility of the SUMMiT process is important for process engineers as well as designers. Summary statistics for critical MEMS technology parameters such as film thickness, line width, and sheet resistance will be reported for the SUMMiT process. Additionally, data from Van der Pauw test structures will be presented. Data on film thickness, film uniformity and critical dimensions of etched line widths are collected from both process and monitor wafers during manufacturing using film thickness metrology tools and SEM tools. A standardized diagnostic module is included in each SUMMiT run to obtain post- processing parametric data to monitor run-to-run reproducibility such as Van der Pauw structures for measuring sheet resistance. This characterization of the SUMMiT process enables design for manufacturability in the SUMMiT technology.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Siv Limary, Siv Limary, Harold D. Stewart, Harold D. Stewart, Lloyd W. Irwin, Lloyd W. Irwin, John McBrayer, John McBrayer, Jeffry J. Sniegowski, Jeffry J. Sniegowski, Stephen Montague, Stephen Montague, James H. Smith, James H. Smith, Maarten P. de Boer, Maarten P. de Boer, Jerome F. Jakubczak, Jerome F. Jakubczak, } "Reproducibility data on SUMMiT", Proc. SPIE 3874, Micromachining and Microfabrication Process Technology V, (30 August 1999); doi: 10.1117/12.361210; https://doi.org/10.1117/12.361210

Back to Top