Which etchant used and whether an etching mask exists: how they make differences on convex-corner undercutting configuration and compensation criteria

Xinxin Li; Rongming Lin; Jianmin Miao; Minhang Bao

doi:10.1117/12.361213

30 August 1999 Which etchant used and whether an etching mask exists: how they make differences on convex-corner undercutting configuration and compensation criteria

Xinxin Li, Rongming Lin, Jianmin Miao, Minhang Bao

Author Affiliations +

Proceedings Volume 3874, Micromachining and Microfabrication Process Technology V; (1999) https://doi.org/10.1117/12.361213
Event: Symposium on Micromachining and Microfabrication, 1999, Santa Clara, CA, United States

Abstract

Anisotropic etching of silicon creates different convex- corner undercutting contours in different varieties of etchant. This difference in undercutting configuration is investigated by analyses of the undercutting formation in detail. Based on Wulff-Jaccodine rules and some experimental results, theoretical analyses are given to clarify the reasons of different undercutting configuration caused by different etchant and the rationality of a certain plane occupying the undercutting position for a certain etchant. Furthermore, the investigation is lead to the convex-corner undercutting under maskless etching, i.e., during the etching mask on the structure removed. Experimental results show that the convex-corner undercutting under maskless etching is far different from that of conventional masked etching. The geometrical evolution of the undercutting is studied both experimentally and analytically. The compensation criteria for maskless etching are discovered and the corresponding compensation schemes are provided.

Citation Download Citation

Xinxin Li, Rongming Lin, Jianmin Miao, and Minhang Bao "Which etchant used and whether an etching mask exists: how they make differences on convex-corner undercutting configuration and compensation criteria", Proc. SPIE 3874, Micromachining and Microfabrication Process Technology V, (30 August 1999); https://doi.org/10.1117/12.361213

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