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31 August 1999 Linear arrays of uncoolded poly SiGe microbolometers for IR detection
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Proceedings Volume 3876, Micromachined Devices and Components V; (1999) https://doi.org/10.1117/12.360502
Event: Symposium on Micromachining and Microfabrication, 1999, Santa Clara, CA, United States
Abstract
In this work we demonstrate the advantages of using polycrystalline silicon germanium (poly SiGe) as a structural material for surface micromachined devices, and more specifically uncooled Infra-Red (IR) microbolometers. The low stress and the low thermal conductivity of poly SiGe enable the realization of IR microbolometers having an effective detectivity above 2 X 109 cm.Hz1/2/W. Currently, linear arrays of optimized devices included in an on-chip vacuum package are developed. The vapor HF sacrificial etching technique is used to release extremely thin microbolometers with high yield. Combined with the practical advantage of an uncooled system, a low-cost yet sensitive sensor system is the result. Possible applications include space based pushbroom earth sensing, spectral environmental monitoring and process control.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Piet De Moor, Sherif Sedky, Deniz Sabuncuoglu, and Chris A. Van Hoof "Linear arrays of uncoolded poly SiGe microbolometers for IR detection", Proc. SPIE 3876, Micromachined Devices and Components V, (31 August 1999); https://doi.org/10.1117/12.360502
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