1 September 1999 Characterization of tungsten silicide (WSix) film grown by chemical vapor deposition (CVD)
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Abstract
The objective of this work is to evaluate a well-known low resistance refractory metal silicide such as tungsten silicide (WSix) for use as a gate electrode in order to achieve faster switching speed. However, the deposition of a WSix film in high aspect ratio trenches is difficult in terms of step coverage as well as adhesion when using a low pressure chemical vapor deposition technique. The deposition canditions need to be carefully tweaked to achieve satisfactory step coverage and film thickness. This paper focuses on the deposition conditions of WSix films onto boron doped poly-Si gate material to achieve higher step coverage in the trenches.
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Fazla Rabbi M.B. Hossain, Fazla Rabbi M.B. Hossain, Satheesh Ambadi, Satheesh Ambadi, Richard Winer, Richard Winer, Ken Kitt, Ken Kitt, Carlos Garcia, Carlos Garcia, Jeff Pearse, Jeff Pearse, } "Characterization of tungsten silicide (WSix) film grown by chemical vapor deposition (CVD)", Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); doi: 10.1117/12.360567; https://doi.org/10.1117/12.360567
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