1 September 1999 Effects of high-density plasma processing on MOSFET matching, noise, and hot carrier reliability
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Experiments comparing High-Density Plasma (HDP) CVD oxide for gap-fill with a PECVD oxide/plasma etch process show effects on hot carrier reliability, transistor matching, and transistor 1/f noise. We present results from wafers processed in a 0.35 micrometers CMOS technology with three levels of metal. The results indicate that the HDP process used for gap-fill significantly improves matching and noise characteristics of metal covered devices. Both n and p channel current mirrors show improved matching between metal an no metal coverage with the HDP process. The presence of a HDP oxide film in IMD stack can reduce the mean threshold voltage difference between metal and no metal covered n- MOSFETs from 45 mV to about 4 mV. Likewise, the total integrated noise over the frequency range of 10 Hz-100 kHz of metal covered n-MOSFET is improved by a factor of 1.25 by the HDP gap-fill process. However, the HDP process has resulted in significant degradation of the d.c. hot carrier reliability of n-MOSFETs. These effects may be explained by the large amounts of hydrogen incorporated in the back-end dielectric with the HDP process.
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Sidhartha Sen, Sidhartha Sen, Edward B. Harris, Edward B. Harris, Richard W. Gregor, Richard W. Gregor, Samuel Martin, Samuel Martin, Mahjoub A. Abdelgadir, Mahjoub A. Abdelgadir, Rafael N. Barba, Rafael N. Barba, Sundar Chetlur, Sundar Chetlur, K. Steiner, K. Steiner, } "Effects of high-density plasma processing on MOSFET matching, noise, and hot carrier reliability", Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); doi: 10.1117/12.360541; https://doi.org/10.1117/12.360541

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