Translator Disclaimer
Paper
1 September 1999 Formation of heavily boron-doped nanolayer in silicon by powerful ion irradiation
Author Affiliations +
Abstract
An opportunity of forming heavily doped boron layers in silicon is analyzed in this work for variation of potential barrier height on the metal-semiconductor interfaces. Implantation of boron atoms in silicon samples was made by recoil method, inducing Al ion beams bombardment with current density 4-10 A/cm2 and 30-150 keV energy. An analysis of getting structures by SIMS and calculation of their electric parameters show the opportunity of conducting layers formation with a thickness of 10 nm and carrier concentration more than 1018 cm-3.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrej P. Kokhanenko, Aleksander G. Korotaev, Aleksander V. Voitsekhovskii, Ivan Grushin, Mikhail S. Opekunov, and Gennady E. Remnev "Formation of heavily boron-doped nanolayer in silicon by powerful ion irradiation", Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); https://doi.org/10.1117/12.360564
PROCEEDINGS
10 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT


Back to Top